v60120c, vb60120c www.vishay.com vishay general semiconductor revision: 17-aug-15 1 document number: 88976 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual high voltage trench mos barrier schottky rectifier ultra low v f = 0.41 v at i f = 5 a features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? low thermal resistance ? meets msl level 1, per j-std-020, lf maximum peak of 245 c (for to-263ab package) ? solder bath temperature 275 c maximum, 10 s, per jesd 22-b106 (for to-220ab package) ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency converters, switching power supplies, freewheeling diod es, or-ing diode, dc/dc converters and reverse battery protection. mechanical data case: to-220ab and to-263ab ? molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs-co mpliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 2 x 30 a v rrm 120 v i fsm 300 a v f at i f = 30 a 0.71 v t j max. 150 c package to-220ab, to-263ab diode variations dual common cathode to-220ab 1 2 3 tmbs ? to-263ab 1 2 k v60120c vb60120c pin 1 pin 2 k heatsink pin 1 pin 2 case pin 3 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol v60120c vb60120c unit maximum repetitive peak reverse voltage v rrm 120 v maximum average forward rectified current (fig. 1) per device i f(av) 60 a per diode 30 peak forward surge current 8. 3 ms single ha lf sine-wave ? superimposed on ra ted load per diode i fsm 300 a non-repetitive avalanche energy ? at t j = 25 c, l = 100 mh per diode e as 260 mj peak repetitive reverse current at t p = 2 s, 1 khz, ? t j = 38 c 2 c per diode i rrm 0.5 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg -40 to +150 c
v60120c, vb60120c www.vishay.com vishay general semiconductor revision: 17-aug-15 2 document number: 88976 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms ? ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - forward power loss characteristics per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditi ons symbol typ. max. unit breakdown voltage i r = 1.0 ma t a = 25 c v br 120 (minimum) - v instantaneous forward voltage per diode i f = 5 a t a = 25 c v f (1) 0.48 - v i f = 15 a 0.66 - i f = 30 a 0.88 0.95 i f = 5 a t a = 125 c 0.41 - i f = 15 a 0.58 - i f = 30 a 0.71 0.75 reverse current at rated v r per diode v r = 90 v t a = 25 c i r (2) 14 - a t a = 125 c 11 - ma v r = 120 v t a = 25 c 40 500 a t a = 125 c 15 45 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol v60120c vb60120c unit typical thermal resistance per diode r ? jc 2.2 2.2 c/w ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-220ab v60120c-e3/4w 1.89 4w 50/tube tube to-263ab vb60120c-e3/4w 1.38 4w 50/tube tube to-263ab vb60120c-e3/8w 1.38 8w 800/reel tape and reel average forward current (a) case temperature (c) 60 70 50 40 30 20 10 0 0 25 50 75 100 125 150 resistive or inductive load 0 0 5 10 15 20 25 30 35 5 10 15 20 25 30 average power loss (w) average forward current (a) d = 1.0 d = 0.1 d = 0.3 d = 0.5 d = 0.8 d = 0.2 d = t p /t t p t
v60120c, vb60120c www.vishay.com vishay general semiconductor revision: 17-aug-15 3 document number: 88976 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - maximum non-repeti tive peak forward surge current per diode fig. 4 - typical instantaneous forward characteristics per diode fig. 5 - typical reverse characteristics per diode fig. 6 - typical junction capacitance per diode fig. 7 - typical transient thermal impedance per diode 0 50 100 150 200 250 300 350 1 10 100 n umber of cycles at 60 hz peak forward surge current (a) t j = t j max. 8.3 ms single half sine-wave 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 t a = 150 c t a = 125 c t a = 25 c instantaneous forward voltage (v) instantaneous forward current (a) 0.001 0.01 0.1 1 100 10 10 20 30 40 50 60 70 80 90 100 t a = 150 c t a = 125 c t a = 25 c percent of rated peak reverse voltage (%) instantaneous reverse current (ma) 100 1000 10 000 0.1 1 10 100 reverse voltage (v) junction capaci tance (pf) t j = 25 c f = 1.0 mhz v sig = 50 mvp-p 0.1 1 10 0.01 0.1 1 10 100 t - pulse duration (s) transient thermal impedance (c/w) junction to case
v60120c, vb60120c www.vishay.com vishay general semiconductor revision: 17-aug-15 4 document number: 88976 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) to-220ab 0.113 (2.87) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15.87) pi n 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.028 (0.70) 0.154 (3.91) 0.148 (3.74) 1 3 2 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) to-263ab mounting pad layout 0.670 (17.02) 0.591 (15.00) 0.105 (2.67) 0.095 (2.41) 0.08 (2.032) mi n . 0.15 (3.81) mi n . 0.33 (8.38) mi n . 0.42 (10.66) mi n . 12 k k 0.140 (3.56) 0.110 (2.79) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.090 (2.29) 0 to 0.01 (0 to 0.254) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.190 (4.83) 0.160 (4.06) 0.205 (5.20) 0.195 (4.95) 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.360 (9.14) 0.320 (8.13) 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) mi n .
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